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N2200 Fuze Capacitors

Table of Maximum Capacitance Values for Custom Chips

Class I - N2200 (R) Dielectric

Max Tcc = + 25% @ -55°C, -20% @ 125°C
DF= .15 Max

N2200 Fuze Capacitors

(Also see Class I Dielectric charts, "R" material, for other maximum capacitance values.)
SIZE 2838 3840 4565 6964 13060
LENGTH-NOM .280 .380 .450 .690 1.600
WIDTH-NOM .380 .400 .650 .650 .600
MAX-THICK .250 .250 .250 .350 .250
Dimensions are +/-5% length and width or .015"; whichever is greater. MB = .005" / .030"


SIZE / VOLTAGE 2838 3840 4565 6964 13060
500V .12μF .15μF .27μF .33μF .68μF
1000V .068μF .10μF .18μF .22μF .47μF
2000V .039μF .056μF .10μF .18μF .27μF
3000V .033μF .039μF .033μF .12μF .154μF
4000V .022μF .027μF 4700pF .082μF .047μF
5000V .012μF .015μF 3900pF .068μF .027μF
7000V   . 2700pF .047μF .01μF
10000V     1500pF .027μF 6800pF
Higher voltages and capacitance values are available with "stacked chip" configurations and thickness maximums greater than .350". Other chip sizes also available. Please consult the factory.

Temperature Coefficient

N2200 (R) Dielectric

Temperature Coefficient, Percent Vs. Degrees C

This is the Class I temperature compensating dielectric. N2200 is non-piezoelectric and particularly well suited for repetitive high current pulse type applications (where long charge/discharge life is required). N2200 also has no voltage coefficient, which makes it more volumetric efficient than X7R at higher voltages. Also, the lower ESR (DF=.1% typical, X7R=1.8% to 2.5% typical) as well as increased capacitance at lower temperatures is an additional benefit in many applications.

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